Response of selected local plantain cultivars to PIBS (Plants issus de bourgeons secondaires) technique

English

One major constraint to plantain production has been inadequate healthy planting materials at the time of planting. Several technologies for multiplying healthy planting materials exist but could not meet farmers’ demand. A study was conducted to assess the performance of various landraces plantain to plants issus de bourgeons secondaires (PIBS) technique. Five cultivars of Musa sapientum (Apantu (False Horn), Asamienu (True Horn), Oniaba (intermediate French plantain) and FHIA-21 (tetraploid hybrid plantain) were tested to determine their response to the PIBS technique. Sword suckers of each cultivar with weight of between 0.2-0.5 kg were prepared and buried in fine sawdust in a humidity chamber built using transparent polyethylene sheets. Results at harvest showed that removal of rooted sprouts started three weeks after planting and every week thereafter for eight weeks. The intermediate French plantain cultivar (Oniaba) produced the least average number (about 20) of healthy planting. Apantu (False Horn) produced an average of about 75 healthy planting materials. The hybrid FHIA-21 on the other hand generated an average of about 85 healthy planting materials. Asamienu (True Horn) produced the highest healthy seedlings of about 90 healthy planting materials. The results revealed that the leaf scar carries a primary bud at the intersection of each leaf sheath and several eyes along the entire length of the leaf sheath which could not have developed into suckers. However, with this technique the eyes could be activated to sprout as healthy planting materials. The technique proved as an efficient method of multiplying healthy planting materials for plantain and could thus be recommended for adoption not only by peasant farmers but also to others who could become commercial seed producers. But there will be a need for certification guidelines for seed growing systems.

Dzomeku, B. M.; Darkey, S. K.; Wünsche, J. N.; Bam, R. K.